Conductance Matrix (G) ====================== Conductance outputs describe leakage paths, dielectric loss, and shunt conductance that can reduce resonator Q and qubit coherence. .. list-table:: :header-rows: 1 * - # - Parameter - Symbol / Unit - Extraction Method - Typical Q3D Value - Ideal / Optimal - Good Range - Worst Case - Why It Matters - Key Design Note * - 11 - Self-Conductance (G_ii) - G_ii / nS - Q3D DC conductance solve - < 0.1 nS - < 0.1 nS (high-R substrate) - 0.1 – 1 nS - > 10 nS - Leakage current to ground through substrate limits resonator quality factor directly - G_ii = 1/R_leak; appears as parallel resistance Q = ω_r C_r / G in resonator model * - 12 - Substrate Bulk Conductance - G_bulk / nS - Resistivity measurement + Q3D G matrix - < 0.01 nS - < 0.01 nS (> 10 kΩcm Si at 4K) - 0.01 – 0.5 nS - > 5 nS - Low-resistivity Si drastically degrades resonator Q; bulk conductance is the dominant channel - Use high-resistivity Si (> 10 kΩcm) or sapphire; resistivity increases >100× when cooled to 4K (carrier freeze-out; magnitude is strongly doping-dependent) * - 13 - Surface / Interface Conductance - G_surf / nS/μm - Surface participation ratio + loss tangent fitting - < 0.001 nS/μm - < 0.001 nS/μm (clean passivated) - 0.001 – 0.05 nS/μm - > 0.1 nS/μm - Conductance along metal-air or metal-substrate interfaces is a major T₁ limitation via TLS - Adsorbed water and organic residues increase G_surf; HF dip and N₂ purge before cooldown helps * - 14 - Mutual Conductance (G_ij) - G_ij / pS - Q3D off-diagonal G matrix extraction - < 1 pS - < 1 pS (isolated conductors) - 1 – 50 pS - > 500 pS - Leakage coupling between signal conductors via substrate surface conduction channels - Non-zero G_ij in presence of surface water or conductive substrate; fixed by surface clean or guard rings